Apparatus and method for electronic fuse with improved ESD tolerance

ABSTRACT

Method of making an electronic fuse blow resistor structure. In one embodiment, the method includes forming an insulator film, depositing a conductor on the insulator film, and after the depositing, etching the conductor to form a plurality of spaced apart non-conductive regions and a plurality of spaced-apart conductive regions. In another embodiment, the method includes forming the insulator film, forming a conductive sheet, and sub-dividing the conductive sheet into the plurality of conductive regions.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is a divisional application of U.S. patentapplication Ser. No. 11/004,846 filed Dec. 7, 2004, now U.S. Pat. No.7,334,320 which is a divisional application of U.S. patent applicationSer. No. 10/707,282 filed Dec. 3, 2003, now abandoned, the disclosure ofthese applications is expressly incorporated by reference herein intheir entireties.

BACKGROUND OF INVENTION

1. Field of the Invention

The invention generally relates to the optimization of electronic fuses,and more particularly to a method and apparatus for an electronic fusepolysilicon resistor for high current applications and increaseresistance to ESD (electrostatic discharge) failure.

2. Background Description

Optimization of a polysilicon electronic fuse element is important forfuse initiation and verification of such initiation, and prevention offailure from ESD events. ESD events can lead to destructive failure offuse elements.

FIG. 1 illustrates an example of a related art electronic fuse resistor10 having a salicided polysilicon film 14 overlying a polysilicon film12. The related art fuse 10 also includes metal contacts 16 inelectrical communication with the salicided polysilicon film 14. Tomaintain a low resistance, the related art electronic fuse 10 is of arelatively narrow width.

FIG. 2 illustrates a cross-section of the related art electronic fuse 10along line A-A′ of FIG. 1. As can be seen in the cross-section, thepolysilicon film 12 and the salicided polysilicon film 14 of the relatedart fuse 10 are about the same width.

Furthermore, the salicided polysilicon film 14 forms a single continuousconductor providing a single current flow path which is distributed overthe entire the surface of the polysilicon film 12.

In the related art fuses, the width of the salicided polysilicon film 14is the same as the width of the polysilicon film 12. Consequently, asthe polysilicon film 12 is made larger to withstand larger currents, thesalicided polysilicon film 14 becomes larger and requires higher currentloads to blow. Conversely, as the salicided polysilicon film 14 isreduced in size to blow at smaller currents, the polysilicon film 12becomes more susceptible to damage.

As a result, the window in which to blow the salicide film 14 andmaintain the integrity of the insulator 12 and related polysilicon lineis narrow. In other words, there is a small difference between theminimum current necessary to blow the fuse and the amount of currentwhich will damage the insulator supporting the salicided film 12. Assuch, the current pulse width to implement the fuse blow is limited to arelatively narrow given time and current domain. Accordingly, a blownfuse may be accompanied by a damaged insulator impairing functioning ofthe associated circuit.

At electric currents above the critical current-to-failure, the relatedart polysilicon fuse resistor structure can lead to metal blistering,extrusion and melting.

High current flow through the structure of related art fuses can lead tocracking of the insulator films due to high thermal and mechanicalstress. Thermal gradients in the surrounding insulator which may lead tomechanical stresses which exceed the yield stress can lead to insulatorcracking. Such cracking can cause loss of integrity of the dielectricand semiconductor chip. Accordingly, related art fuses may malfunctionwhen blowing upon the application of high currents.

Hence, because related art fuses are susceptible to damage due to highcurrents, a structure which can sustain high currents and maintainstructural integrity and yet lead to fuse initiation and removal of thesalicide during the fuse initiation is needed.

SUMMARY OF INVENTION

In a first aspect of the invention, an electronic fuse is provided. Theelectronic fuse includes an insulating film and at least one conductiveregion partially covering the insulating film. At least onenon-conductive region is provided on the insulating film adjacent theconductive region.

In another aspect of the invention, the electronic fuse includes apolysilicon film with a top surface and a conductive film disposed onthe top surface of the polysilicon film forming a plurality of separateconductive regions. Non-conductive regions are provided between theplurality of separate conductive regions.

In another aspect of the invention, a method is provided for forming afuse. The method includes forming and defining an insulator film, andforming at least one conductive region adjacent to at least onenon-conductive region on a surface of the insulator film.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 illustrates a related art electronic fuse resistor structure;

FIG. 2 illustrates a cross-section taken along A-A″ of FIG. 1;

FIG. 3 illustrates an example of an embodiment of the electronic fuseresistor structure;

FIG. 4 illustrates a cross-section taken along B-B′ of FIG. 3;

FIG. 5 illustrates a cross-section of another embodiment of theinvention;

FIG. 6 illustrates a mask for depositing conductive regions on aninsulator;

FIG. 7 illustrates forming a conductive film into conductive strips; and

FIG. 8 is a graph of resistance versus number of intact conductivestrips for an electronic fuse.

DETAILED DESCRIPTION

The invention relates to the optimization of electronic fuses, and moreparticularly to a method and apparatus for an electronic fusepolysilicon resistor for high current applications and increaseresistance to ESD (electrostatic discharge) failure.

In the invention, a conductive region is provided on the surface of aninsulator with a non-conductive region adjacent thereto. The insulatormay also be a resistor. By positioning a conductive region adjacent to anon-conductive region on the insulator, thermal stress in the insulatordue to current flowing through the conductive region is spread over alarger area, thus reducing the localized peak stress in the insulator.With stress reduced in such a manner, higher currents may pass throughthe conductive region without causing damage to the insulator.Accordingly, the fuse structure tends to maintain its structuralintegrity at high currents, making it suitable for some types of highcurrent applications.

The invention also divides current into localized flow-paths orconductive regions, and those flow-paths are distributed across thesurface of an insulator or resistor. Such a distribution of current overthe surface reduces thermal stresses in the insulator or resistor, andreduces the risk of damage to the underlying insulator or resistorsubstrate in high current applications. Additionally, the structure hasa high tolerance to high current and maintains structural and materialintegrity under high current applications which reduces the possibilityof failure due to ESD or high current. The invention also provides anelectronic fuse blow resistor structure where structure integrityremains intact after the fuse blows and, additionally, has a wellcontrolled failure process to facilitate distinguishing between an“open” and a “short” circuit. The invention also provides a hightolerance resistor element for high current RF applications.

Referring now to the drawings, FIG. 3 illustrates an example of anembodiment of the invention generally depicted at reference numeral 20.The structure includes a polysilicon film or insulator 12 which supportsa fuse 18. The fuse 18 may be defined as including conductive regions orstrips 22 or may be the conductive strips in addition to the polysiliconfilm. The conductive strips 22 are separated from one another by anon-conductive region 24. The insulator 12 also supports fuse leads 26,which are in electrical contact or communication with the conductivestrips 22. The structure 20 also includes metal contacts 16 which are inelectrical communication with the fuse leads 26. The fuse leads 26 arelocated at opposite ends of each conductive region 22. The insulator 12may also be a resistive film forming a resistive element. It should beunderstood that the fuse may include only one conductive region adjacentto only one non-conductive region.

Although FIG. 3 shows the conductive regions of uniform width andapproximately parallel to one another, other conductor patterns arecontemplated with use by the invention. For example, some applicationsmay benefit from the conductor having various widths or various lengthsrelative to one another. Other applications may have the distancebetween the conductors vary in a prescribed pattern or have anon-parallel pattern. By way of one illustrative example, non parallelstrips may be provided.

FIG. 4 illustrates a cross-section of the embodiment of the invention 20shown in FIG. 3 taken along line B-B′. As can be seen in thecross-section, conductive regions 22 are positioned on top of theinsulator 12. Each conductive region 22 is separated from adjacentconductive regions 22 by a non-conductive region 24.

Where only one conductive region 22 is provided, only one non-conductiveregion 24 may also be provided. The non conductive region may includeknown insulation material or an air gap, for instance.

In addition to various the conductor patterns mentioned above, certainembodiments may have conductors of 100 to 400 Å in thickness, forexample, with a width and lengths being a function of the application,all depending on the resistance value desired. Additional examples ofmaterials from which to make the conductors include salicidedpolysilicon and various metals, such as, for example, aluminum, copper,titanium or other refractory materials.

In operation, current flows through metal contacts 16 and a fuse lead26. The current then flows through the conductive regions or strips 22to the opposite fuse lead 26 and corresponding metal contact 16. Byhaving multiple conductive regions 22 separated by non-conductiveregions 24, current flow is directed along discrete local pathsdistributed across the top of the insulator 12. Such localized andseparate paths of current flow on top of the insulator 12 and reducethermal stress within the insulator 12. Thus, the insulator 12 canwithstand higher levels of current flow through the conductive regions22 before being stressed to failure. However, because thecross-sectional area of all the conductive regions 22 is stillrelatively small, the fuse will blow at current levels similar to therelated art fuse.

Where the insulator 12 is a polysilicon film or resistor, allowing for awider polysilicon film or resistor can also lead to the prevention ofthe polysilicon film or resistor failure. By allowing the polysiliconfilm to be wider, the failure of the polysilicon film will be lessenedbecause the thermal stresses therein will be reduced. Such a moltenfilamentation occurs in the polysilicon resistor element when thecurrent exceeds the P_(crit), i.e.; the critical power to failure of thepolysilicon film. Such failure can be calculated as follows:V(a)²=(12g _(ox) T _(m) /g _(l) d _(p) d _(ox))(1−F(a))/(30−F(a))  Eq. 1F(a)=tan h(α(a−w)/2)/tan h(αa/2)  Eq. 2α² =r _(Si) g _(ox) /d _(p) d _(ox)  Eq. 3

V is voltage, r is resistance, T_(m) is temperature of a metal, w iswidth of a line, “a” is a parameter of constriction of the line, g_(ox)is gate conductance, g_(l) is film conductance, d_(p) is the thicknessof the polysilicon and d_(ox) is the thickness of the oxide.

The failure of polysilicon film is also well determined from ESD testingof unsalicided polysilicon resistor elements. ESD experimental resultsshow that the ESD robustness increases with the width of the polysiliconstrip. Hence, the ESD robustness of the element also increases with thewidth of the polysilicon fuse or resistor. However, by using a salicideblock mask to form conductive regions, the current can be limited to thesalicide film or conductive regions leading to failure of the conductorwithout rupture of the polysilicon film or resistor.

The ESD robustness of an individual wire is a function of the crosssectional area. The smaller the cross sectional area of the wire, thelower the ESD robustness, which can lead to improved accuracy of thedigitization. It should also be understood that the more strips, at asmaller cross section will also provide more discrete digitization. Forexample, 20 strips at 5 microns will have a more discrete digitizationthan 10 strips at 10 microns, even though there is a same crosssectional area. This is because there are more strips that can “blow”thus increasing the stepwise digitization of a device.

The conductive regions of the electronic fuse or resistor are configuredso that the electrical resistances will be “digitized” and theresistance will undergo step changes as the number of conductive regionsor fingers of the salicide film begins to fail. The digitation of theconductor strips will allow digitized sensing levels which are helpfulfor digital circuits to determine the failure of one or more of theconductive regions or fingers. In electrical failure, damage can lead tonon-uniformities and irregularities in the resistance magnitude. Usingconductive regions such as a salicide finger set, the optimization ofthe circuit and fuse resistance magnitudes will step through the failurepoints as particular conductive regions rupture or fail. This method mayallow an improved sensing scheme well suited to digital circuits.

Referring to FIG. 5, another embodiment of the electronic fuse 30 isshown, where an insulator 12 supports conductive regions 22. Theconductive regions 22 have non-conductive regions therebetween which areat least partially filled with a solid, liquid, or semi-solidnon-conductive material 28. It should be understood that thenon-conductive material 28 may be porous, and in some cases may includea combination of gas, liquid and solid. The non-conductive material 28may have good electrical insulating properties. In one aspect of theinvention, the non-conductive material 28 is resistant to damage due tothermal and mechanical stresses.

FIG. 6 illustrates a mask on an insulator 12 for forming multipleconductive regions or paths on the surface of the insulator. As in FIGS.3 and 4, the insulator 12 may also be a resistive material forming aresistive element. By using a salicide block mask, a plurality ofsalicided regions can be formed on a polysilicon film.

By creation of narrow width parallel conductive regions, current can beconstricted to regions on the salicide region without the failure of theunderlying insulator or resistor.

In this fashion, the width of the polysilicon fuse or resistor width canbe increased as to avoid failure due to thermal stress.

As another example, a salicide block mask may be used to form a set ofconductive regions or comb fingers of salicided regions. Such astructure will cause current to flow along narrow stripes of thesalicided region. As the current increases, the salicide fingers willblow leading to opening of the fuse with minimized thermal stress in theunderlying substrate.

Referring to FIG. 7, an illustration of how a conductive sheet 15 can besub-divided into multiple conductive regions 14 is shown. Thus, byforming the conductive sheet 15 as multiple conductive regions 14,current can be directed along discrete localized paths thereby reducingthermal stresses on any underlining insulator or resistor. However,because the total cross-section of the multiple conductive regions 14 issimilar to that of the conductive sheet 15, the current carryingcapacity of the multiple conductive regions 14 is comparable to that ofthe conductive sheet 15. It should be noted that the conductive regions14 are typically formed by depositing a conductor onto an insulator orresistor on which a mask has been formed to produce the conductiveregions 14. The conductive regions 14 may also be formed by etching theconductor to have non-conductive regions.

FIG. 8 illustrates the step response change in resistance of theelectronic fuse or resistor as conductive regions or strips are blown orruptured. As shown in the graph, the electronic fuse has the lowestresistance when no conductive strip has been ruptured. When a singleconductive region or strip ruptures, the resistance of the fuseincreases by a pre-determine amount to a prescribed level. In likemanner, as further conductive regions are ruptured the resistanceincreases stepwise until it reaches a maximum value when all theconductive strips have blown. The change in resistance for each step,and the resistance value for each step may be determined by forming theunderlying insulator or resistor film and the conductive regions ofsuitable materials and dimensions.

By structuring the fuse to blow in discrete steps, the fuse blows in amore predictable manner. Additionally, the fuse will have as manyblow-steps as there are conductive regions. The stepwise blowing of thefuse reduces the chance that the fuse will malfunction by partiallyblowing and still conduct some current. Such a failure mode is furtheravoided because of the reduced thermal stress in the underlyinginsulator or resistor film.

Also, because the fuse blows in discrete steps has prescribed changes inresistance, the fuse described herein exhibits discrete resistancevalues. The discrete resistance values make the device amenable todigital sensing to determine whether it is in a blown or intact state.Additionally, the fuse may function as a programmable resistor havingwell-characterized resistor value options available to the user.

It should also be understood that the fuse of the invention will be usedin a semiconductor environment and can be used in, for example, CMOStechnology, Si on Insulator technology or SiGe technologies, to name afew. It is also well understood in the art that the insulator around thestructure can be of different thermal conductivities.

While the invention has been described in terms of various embodiments,those skilled in the art will recognize that the invention can bepracticed with modification and still remain within the spirit and scopeof the appended claims. For example, multiple fuse elements may becombined with multiple resistor elements to form a component whichreverts to a specified resistive value in the event of fuse rupture.

1. A method of making an electronic fuse blow resistor structure,comprising: forming an insulator film; depositing a layer of conductordirectly on the insulator film; after the depositing, etching the layerof conductor to form a plurality of spaced apart non-conductive regionsand a plurality of spaced-apart conductive regions; and forming a fuseresistor structure including fuse leads formed on top of respective endsof the conductive regions, wherein the non-conductive regions and theconductive regions are arranged on a same layer, wherein the conductiveregions comprise conductive strips which direct current flow alongdiscrete paths distributed across a top of the insulator film, whereinthe fuse resistor structure changes in resistance based on a number ofthe conductive regions that are blown, wherein the insulator filmcomprises a polysilicon film, wherein the fuse resistor structureprovides for resistance that undergoes step changes based on the numberof the conductive regions that electrically fail, and wherein theinsulator film comprising the polysilicon film satisfies:V(a)²=(12g _(ox) T _(m) /g _(l) d _(p) d _(ox))(1−F(a))/(30−F(a));F(a)=tanh(α(a−w)/2)/tanh(αa/2); andα² =r _(Si) g _(ox) /d _(p) d _(ox), where V is voltage, r isresistance, T_(m)is temperature of a metal, w is width of a line, “a” isa parameter of constriction of the line, g_(ox) is gate conductance,g_(l) is film conductance, d_(p) is a thickness of the polysilicon andd_(ox) is a thickness of an oxide.
 2. The method of claim 1, furthercomprising forming a first fuse lead in electrical communication with afirst end of the plurality of spaced-apart conductive regions and asecond fuse lead in electrical communication with a second end of theplurality of spaced-apart conductive regions.
 3. The method of claim 2,further comprising forming at least one electrical contact in electricalcommunication with the first fuse lead and at least one electricalcontact in electrical communication with the second fuse lead.
 4. Themethod of claim 1, wherein the plurality of conductive regions comprisesa metal.
 5. The method of claim 1, wherein the electronic fuse blowresistor structure comprises a programmable electronic fuse arranged ona resistive insulator film.
 6. The method of claim 1, further comprisingforming by deposition the fuse leads arranged on opposite sides of andin electrical contact with the plurality of spaced-apart conductiveregions.
 7. The method of claim 1, wherein the plurality of spaced-apartconductive regions comprise a thickness of 100 to 400 Å.
 8. The methodof claim 1, wherein the plurality of spaced-apart conductive regions areconfigured to provide digitized resistance.
 9. The method of claim 1,wherein each non conductive region comprises a region at least partiallyfilled with a solid, liquid, or semi-solid non-conductive material. 10.The method of claim 1, wherein each non conductive region comprises aporous material.
 11. The method of claim 1, wherein each non conductiveregion comprises a combination of a gas, a liquid, and a solid.
 12. Themethod of claim 1, wherein the plurality of spaced-apart conductiveregions comprise a uniform width and are arranged approximately parallelto one another.
 13. The method of claim 1, wherein the plurality ofspaced-apart conductive regions comprise salicided regions.
 14. Themethod of claim 1, wherein the conductive strips comprise elongatedstrips arranged parallel to one another and having a thickness of 100 to400 Å, and wherein the method further comprises forming by depositionthe fuse leads arranged on opposite sides of and in electrical contactwith the elongated conductive strips.
 15. The method of claim 14,wherein the electronic fuse blow resistor structure comprises aprogrammable electronic fuse arranged on a resistive insulator film andthe plurality of elongated conductive strips are configured to providethe digitized resistance and such that resistance of the programmableelectronic fuse changes based on a number of the plurality of elongatedconductive strips that are blown.
 16. A method of making an electronicfuse blow resistor structure comprising an insulating film and aplurality of spaced-apart conductive regions arranged on the insulatingfilm, the method comprising: forming the insulator film; forming aconductive sheet; sub-dividing the conductive sheet into a single layerhaving a plurality of conductive regions and non-conductive regions,such that each non-conductive region is arranged between two adjacentconductive regions; and forming a fuse resistor structure includingfirst and second fuse leads formed at respective ends of the conductiveregions, wherein the first fuse lead contacts a respective first end ofeach of the plurality of conductive regions, and the second fuse leadcontacts a respective second end of each of the plurality of conductiveregions, wherein the insulator film supports the first and second fuseleads, wherein the conductive regions comprise conductive strips whichdirect current flow along discrete paths distributed across a top of theinsulator film, wherein the fuse resistor structure changes inresistance based on a number of the conductive regions that are blown,wherein the fuse resistor structure provides for resistance thatundergoes step changes based on the number of the conductive regionsthat electrically fail, wherein each non conductive region comprises acombination of a gas, a liquid, and a solid, wherein the insulator filmcomprises a polysilicon film, and wherein each of the plurality ofconductive regions is formed directly on the polysilicon film.
 17. Themethod of claim 16, further comprising forming a first fuse lead inelectrical communication with a first end of the plurality ofspaced-apart conductive regions and a second fuse lead in electricalcommunication with a second end of the plurality of spaced-apartconductive regions.
 18. The method of claim 17, further comprisingforming at least one electrical contact in electrical communication withthe first fuse lead and at least one electrical contact in electricalcommunication with the second fuse lead.
 19. The method of claim 16,wherein the plurality of spaced-apart conductive regions comprises ametal.
 20. The method of claim 16, wherein the electronic fuse blowresistor structure comprises a programmable electronic fuse arranged ona resistive insulator film.
 21. A method of making an electronic fuseblow resistor structure, comprising: forming an insulator film;depositing a conductor layer over the insulator layer; after thedepositing, etching the conductor layer to form alternatingnon-conductive and conductive regions arranged on a common layer,wherein each of the conductive regions is formed directly on theinsulator film; and forming a first fuse lead in electricalcommunication with a first end of each of the conductive regions and asecond fuse lead in electrical communication with a second end of eachof the conductive regions, wherein the conductive regions are configuredto provide digitized resistance and comprise conductive strips whichdirect current flow along discrete paths distributed across a top of theinsulator film, the insulator film comprises a polysilicon film, theinsulator film supports the first and second fuse leads, the fuseresistor structure provides for resistance that undergoes step changesbased on the number of the conductive regions that electrically fail,each non conductive region comprises a combination of a gas, a liquid,and a solid, and the insulator film comprising the polysilicon filmsatisfies:V(a)²=(12g _(ox) T _(m) /g _(l) d _(p) d _(ox))(1−F(a))/(30−F(a));F(a)=tanh(α(a−w)/2)/tanh(αa/2); andα² =r _(Si) g _(ox) /d _(p) d _(ox), where V is voltage, r isresistance, T_(m) is temperature of a metal, w is width of a line, “a”is a parameter of constriction of the line, g_(ox) is gate conductance,g_(l) is film conductance, d_(p) is a thickness of the polysilicon andd_(ox) is a thickness of an oxide.
 22. A method of making an electronicfuse blow resistor structure comprising an insulating film and aplurality of spaced-apart conductive regions arranged on the insulatingfilm, the method comprising: forming the insulator film; forming aconductive sheet; sub-dividing the conductive sheet into a single layerhaving a plurality of conductive regions and non-conductive regions,such that each non-conductive region is arranged between two adjacentconductive regions; and forming a fuse resistor structure includingfirst and second fuse leads formed at respective ends of the conductiveregions, wherein the first fuse lead contacts a respective first end ofeach of the plurality of conductive regions, and the second fuse leadcontacts a respective second end of each of the plurality of conductiveregions, wherein the insulator film supports the first and second fuseleads, wherein the conductive regions comprise conductive strips whichdirect current flow along discrete paths distributed across a top of theinsulator film, wherein the fuse resistor structure changes inresistance based on a number of the conductive regions that are blown,wherein the fuse resistor structure provides for resistance thatundergoes step changes based on the number of the conductive regionsthat electrically fail, wherein each non conductive region comprises acombination of a gas, a liquid, and a solid, wherein the insulator filmcomprises a polysilicon film, wherein each of the plurality ofconductive regions is formed directly on the polysilicon film, andwherein the insulator film comprising the polysilicon film satisfies:V(a)²=(12g _(ox) T _(m) /g _(l) d _(p) d _(ox))(1−F(a))/(30−F(a));F(a)=tanh(α(a−w)/2)/tanh(αa/2); andα² =r _(Si) g _(ox) /d _(p) d _(ox), where V is voltage, r isresistance, T_(m), is temperature of a metal, w is width of a line, “a”is a parameter of constriction of the line, g_(ox) is gate conductance,g_(l) is film conductance, d_(p) is a thickness of the polysilicon andd_(ox) is a thickness of an oxide.